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2012/1/20 特別講義のお知らせ

情報・電気・電子分野GCOE「アクセス空間支援基盤技術の高度国際連携」では、 mso-bidi-font-family:"MS Pゴシック";mso-ansi-language:EN-US;mso-fareast-language:
JA;mso-bidi-language:AR-SA">スタンフォード大学のProf. Paul McIntyre
をお招きし、特別講義を下記の日程で行います。 

○日時:    120(金 10:45 12:30
○場所:   厚生棟大会議室

○講演者:  JA;mso-bidi-language:AR-SA">Prof. Paul McIntyre, Department of Materials Science and Engineering, Stanford University

○題目: JA;mso-bidi-language:AR-SA">Strained Ge Core/Si(Ge) Shell Nanowires: Stability and Surface Defect Passivation 
○対象者: GCOE事業推進担当教員・GCOEのRA
             
mso-bidi-font-family:"MS Pゴシック";mso-ansi-language:EN-US;mso-fareast-language:
JA;mso-bidi-language:AR-SA">基礎理工学専攻大学院生
、4年生
 
abstract:
This presentation will provide an overview of results both from our laboratory and from others on the growth, structure-property relations and misfit strain relaxation mechanisms in Ge-Si coaxial nanowire (NW) heterostructures.  Such core-shell nanowires have the potential to achieve superior performance in nanoscale electronic and photonic devices by promoting local carrier confinement, surface defect passivation and strain-induced band structure engineering.  Given the importance of growth and annealing temperature for integration of NWs in Si-compatible devices and systems, particular attention will be devoted to the topic of metastable strain in Ge-Si(Ge) core-shell nanowires and its relaxation by thermally-activated mechanisms including 1) surface roughening, 2) core-shell interdiffusion, and 3) misfit dislocation nucleation and growth.  The different mechanisms and rates of strain relaxation during NW growth and post-growth anneals will be highlighted.